3d-tcad simulation study of process variations on vt in 130nm gate length mosfet

Huynh Van Thinh

This paper investigates the effect of process variations on threshold voltage (Vt) in 130nm gate length MOSFET by performing extensive 3D TCAD simulations. Sensitivity of Vt on channel doping, gate oxide time and gate oxide temperature are studied. It’s found that Vtis sensitive to channel doping and gate oxide thickness in the right manner which refers to equation for calculating Vt.

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DOI: http://dx.doi.org/10.24327/ijcar.2017.6810.1020
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